Materials
Reaction-Bonded 가상 바카라
Source RB-가상 바카라 components of nearly any size or shape, customized as needed, including high flatness, large infiltration depth, and internal cooling channels.
RB-SiC offers a unique combination of physical characteristics - high-temperature resistance, low CTE, chemical inertness, high strength, and strength-to-weight ratio - for applications in high-voltage electronics, semiconductor tooling, and more.
Reaction Bonded 가상 바카라 Properties
Choose from a range of RB-가상 바카라 substrate materials optimized for various mechanical, thermal, and electrical characteristics.
Property |
SSC-702 |
SSC-802 |
SSC-902 |
SSC-HTC |
SSC-FG (Fine-Grained Si가상 바카라) |
HSC-702 (Si/가상 바카라+Al) |
TSC-15 (Si/가상 바카라 + Ti) |
RBBC-751 (B4C/가상 바카라/Si) |
SiCAM 700 |
SiCAM 800 |
가상 바카라 Content (Vol. %) |
70 |
80 |
90 |
78 |
70 |
70 |
80 |
70B4C 10가상 바카라 |
70 |
80 |
가상 바카라 Content (Vol. %) |
30 |
20 |
10 |
22 |
30 |
30 |
20 |
20 |
30 |
20 |
Bulk Den가상 바카라ty (g/cc) |
2.95 |
3.00 |
3.12 |
3.02 |
2.94 |
3.01 |
3.13 |
2.56 |
2.95 |
3.00 |
Young’s Modulus (GPa) [E] |
350 |
380 |
410 |
373 |
330 |
330 |
390 |
400 |
345 |
365 |
Poisson’s Ratio |
0.18 |
0.18 |
0.18 |
0.2 |
0.18 |
0.19 |
0.19 |
0.18 |
0.185 |
0.185 |
Flexural Strength (MPa) |
270 |
280 |
280 |
265 |
350 |
275 |
225 |
280 |
280 |
290 |
Fracture Toughness (Mpa-m1/2) |
4 |
4 |
4 |
3.5 |
4 |
5 |
5 |
5 |
3.2 |
3.2 |
CTE (25-100°C) (ppm/K) |
2.9 |
2.9 |
2.7 |
2.9 |
3 |
4.4 |
3 |
4.8 |
3.2 |
3.1 |
Thermal 가상 바카라nd. (W/mK) |
170 |
180 |
190 |
255 |
150 |
200 |
210 |
52 |
177 |
185 |
Specific Heat (J/kg-K) |
680 |
670 |
660 |
670 |
680 |
700 |
670 |
890 |
686 |
674 |
Specific Stiffness (E/ρ) |
119 |
127 |
131 |
- |
112 |
109 |
125 |
156 |
117 |
122 |
Thermal Stability (k/α) |
59 |
62 |
70 |
- |
50 |
45 |
70 |
11 |
55 |
60 |
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