SiC 바카라사이트 유니벳 & Epitaxy

Fabricate a wide range of high-performance power electronics devices on high-quality 바카라사이트 유니벳 wafers as large as 200 mm in diameter.

SiC for Power 바카라사이트 유니벳

Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used in electric and hybrid vehicles, and aerospace applications.

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SiC for RF 바카라사이트 유니벳

Scale up the production of GaN-on-바카라사이트 유니벳 RF power amplifiers and other RF and microwave devices with Coherent high-quality semi-insulating 바카라사이트 유니벳 substrates.

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바카라사이트 유니벳 Epitaxy

Accelerate time-to-market, reduce costs, and improve device performance by building on high-performance 바카라사이트 유니벳 epitaxial wafers from Coherent in up to 200 mm diameter.

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