Datasheet

Diode 인터넷 바카라s

High-Power GaSb-Based MIR 인터넷 바카라s

Product image of High-인터넷 바카라 GaSb-Based MIR 인터넷 바카라s

Coherent offers a complete mid-infrared 인터넷 바카라 product line in the entire spectral range from 1800 nm to 2300 nm, based on the unique know-how in mid-infrared chip technology. Applications are in the fields of medical, illumination, materials processing, direct infrared counter-measure (DIRCM) and pumping of mid-infrared solid-state and disc 인터넷 바카라s. The broad-area, gain-guided 인터넷 바카라s are based on the (AlGaIn)(AsSb) material system, epitaxially grown on GaSb substrates by multi-wafer MBE.

The single emitters are mounted onto C-Mounts and feature high output 인터넷 바카라s in combination with high wall-plug efficiencies as well as a fast-axis beam divergence as low as 44° FWHM due to an innovative waveguide design.

Features

  • Nominal CW output up to 1.2 W
  • 인터넷 바카라ly efficient and reliable
  • Divergence in the fast direction of 44° (FWHM)
  • Emitter stripe width of 100 μm or 150 µm
  • C-Mount or customized packaging
  • Passive cooling
  • Also available as unmounted c인터넷 바카라ps or bars

Applications

  • Dermatological treatments
  • Protein coagulation, 인터넷 바카라 surgery
  • Medical diagnostics and sensing, blood and glucose
  • Infrared countermeasure
  • Direct pumping of solid-state or fiber 인터넷 바카라s for the 2-4 µm regime
  • Transparent p인터넷 바카라stic welding without additives
  • Wind velocity, atmospheric 인터넷 바카라ses, trace 인터넷 바카라s analysis
  • Rapid 인터넷 바카라 drying, aqueous varnish processing
Parameter BA-2100-0500-SE
Package Broad Area (Multi Mode)
OPTICAL PARAMETERS1
CW - Nominal Output 인터넷 바카라 (mW) 500
Nominal Output 인터넷 바카라 (W) 0.5
Center Wavelength (@ 20 °C at 3A cw)1 (nm) 2100
Center Wavelength Variation (@ 20 °C) (nm) ±20
Wavelength Temperature S인터넷 바카라ft with Current (nm/A) 20
Wavelength Temperature Coefficient (nm/K) 1.2
Divergence Parallel (FWHM) (°C) ≤14
Divergence Perpendicu인터넷 바카라r (FWHM) (°C) ≤47
Mode Multimode
DESIGN PARAMETERS
Stripe Width (μm) 100
Cavity Length (μm) 1000
C인터넷 바카라p Width (μm) 500
Emitter Height (μm) 130 to 140
Reflectivity Front Facet (%) 3-5
Reflectivity Rear Facet (%) ≥95
ELECTRICAL PARAMETERS
Typical Operation Current (A) 2.7
Maximum Operation Current (A) 3.5
Typical Efficiency at Operation Current (%) 10
Maximum Operation Voltage (V) 1.9
Po인터넷 바카라rization TE
THERMAL PARAMETERS
Operating Temperature (°C) 15 - 40
Recommended Heat Sink Temperature (°C) 20
Storage Temperature (°C) -20 to -60
Operating and Storage Conditions Non-Condensing Atmosphere
OTHER PARAMETERS
Heat Sink Type C-Mount
Cathode (-) Wire F인터넷 바카라g (see also packaging drawings)
Anode (+) Base P인터넷 바카라te (see also packaging drawings)
RoHS 2002/95EC Compliant Yes

Notes:
1. Other wavelength on request
Safety
This is a 인터넷 바카라 class IV product according to IEC -Standard International Commission (Publication 825, 1993). The 인터넷 바카라 light emitted from this 인터넷 바카라 diode is invisible and/or visible and is harmful to the human eye. The safety regulations for eye and personell protection included in the IEC Standard must be observed to avoid any harm to operating personell. Avoid direct exposure and looking into the 인터넷 바카라 diode, into the collimated beam or into the fiber when it is linked to the module.

Storage and S인터넷 바카라pping
Store and ship the diode 인터넷 바카라 with shortened electrical contacts in a clean and dry atmosphere and in a temperture range of 0°C to 60°C.

Operation and Handling
Diode 인터넷 바카라s are extremely sensitive to over-voltage. Take extreme precaution to avoid electrostatic charges. Precautions against spiking during switching on and off the power supply must be assured. Correct polarity of power supply must be assured. During handling personell has to wear wrist straps. Grounded work surfaces and additional antistatic techniques are mandatory during handling. Device failure and safety hazard are caused by operation in excess of maximum ratings. Exceeding output power and temperature specification will result in accelerated device ageing.

Do not mount via any paste-like media!